Tunneling-injection quantum-dot laser: ultrahigh temperature stability

We propose a genuinely temperature-insensitive quantum dot (QD) laser. Our approach is based on direct injection of carriers into the QDs, resulting in a strong depletion of minority carriers in the regions outside the QDs. Recombination in these regions, which is the dominant source of the temperature dependence, is thereby suppressed, raising the characteristic temperature T/sub 0/ above 1500 K. Still further enhancement of T/sub 0/ results from the resonant nature of tunneling injection, which reduces the inhomogeneous line broadening by selectively cutting off the nonlasing QDs.

[1]  H. Sakaki,et al.  Multidimensional quantum well laser and temperature dependence of its threshold current , 1982 .

[2]  Peter Michael Smowton,et al.  Spectral analysis of InGaAs/GaAs quantum-dot lasers , 1999 .

[3]  D. Bimberg,et al.  Quantum-dot heterostructure lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  Levon V. Asryan,et al.  Inhomogeneous line broadening and the threshold current density of a semiconductor quantum dot laser , 1996 .

[5]  A. Stintz,et al.  Optical characteristics of 1.24-μm InAs quantum-dot laser diodes , 1999, IEEE Photonics Technology Letters.

[6]  L. Coldren,et al.  Lateral carrier confinement in miniature lasers using quantum dots , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  K. Otsubo,et al.  Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-/spl mu/m emitting InGaAs quantum dots , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  L. Asryan,et al.  Longitudinal spatial hole burning in a quantum-dot laser , 2000, IEEE Journal of Quantum Electronics.

[9]  D. Klotzkin,et al.  Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: a comparative study , 1999 .

[10]  M. S. Skolnick,et al.  Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers , 1998 .

[11]  Mikhail V. Maximov,et al.  Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .

[12]  P. Bhattacharya,et al.  A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence , 1995, IEEE Photonics Technology Letters.

[13]  Xiangkun Zhang,et al.  Tunneling injection lasers: a new class of lasers with reduced hot carrier effects , 1996 .

[14]  Levon V. Asryan,et al.  Charge neutrality violation in quantum-dot lasers , 1997 .

[15]  S. Krishna,et al.  High-speed modulation and switching characteristics of In(Ga)As-Al(Ga)As self-organized quantum-dot lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[16]  Levon V. Asryan,et al.  Temperature dependence of the threshold current density of a quantum dot laser , 1998 .

[17]  John E. Bowers,et al.  Room temperature lasing from InGaAs quantum dots , 1996 .

[18]  G. Park,et al.  Continuous-wave low-threshold performance of 1.3-/spl mu/m InGaAs-GaAs quantum-dot lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.