Device process dependence of low-frequency noise in GaAlAs/GaAs heterostructure

Abstract Low-frequency noise in AlGaAs/GaAs single-heterostructure is studied systematically for various contact metals and device dimensions. The low frequency noise spectra varies at a rate of ƒ −1 in the devices with SnAu contacts, and a rate of ƒ −1.5 in those with AuGe contacts. Contact resistances have no effect on the ƒ −1 noise levels, but change the generation-recombination ( G − R ) noise levels induced by the trap level at 0.23 eV. A large G − R noise bulge by the trap level at 0.8 eV is observed in the AuGe contact devices, but not in those with the SnAu contacts. The noise levels of the SnAu contact device are about 22 dB lower than thoe of the AuGe contact device around 1 Hz.

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