Optically-Activated Gold-Compensated Silicon V-Groove P-I-N Diodes : II-Experimental Optical Switching Characteristics

In the present work, a new attempt was made to develop comparatively high voltage and optically-activated gold-compensated silicon p-i-n diodes with a V-groove structure. The devices exhibited a switching voltage up to 600 V, with switching current less than 100 μ A. They also showed full control of switching characteristic with a low optical power. The switching voltage, the turn-on delay time. and the turn-on rise time were measured as a function of optical power level, bias, and pulse width. The measured switching voltage decreased rapidly when the illumination level was increased. The turn-on characteristics showed a strong dependence on an optical pulse power, but a weaker dependence on the width of optical pulse. The turn-off delay was negligible and the fall time was less than 0.03 μs.