0.2-$\mu{\rm m}$ InP/GaAsSb DHBT Power Performance With 10 ${\rm mW}/\mu{\rm m}^{2}$ and 25% PAE at 94 GHz

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm<sup>2</sup>. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm<sup>2</sup> (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 mW/μm<sup>2</sup> (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB).

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