Solid-state lighting: lamps, chips and materials for tomorrow
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[1] A. A. Allerman,et al. Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence , 2002 .
[2] H. J. Unold,et al. High-power VCSELs: single devices and densely packed 2-D-arrays , 1999 .
[3] Kent D. Choquette,et al. Selectively oxidised vertical cavity surface emitting lasers with 50% power conversion efficiency , 1995 .
[4] L. Sugiura,et al. Dislocation motion in GaN light-emitting devices and its effect on device lifetime , 1997 .
[5] C. Carter,et al. Blue LEDs, UV photodiodes and high-temperature rectifiers in 6H-SiC , 1993 .
[6] Sergey Yu. Karpov,et al. Dislocation effect on light emission efficiency in gallium nitride , 2002 .
[7] A. Ovtchinnikov,et al. High-brightness semiconductor laser sources for materials processing: stacking, beam shaping, and bars , 2000, IEEE Journal of Selected Topics in Quantum Electronics.
[8] T. S. Tan,et al. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency , 1999 .
[9] R. G. Waters,et al. Diode laser degradation mechanisms: A review , 1991 .
[10] E. C. Carr,et al. CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .
[11] Takashi Jimbo,et al. Characteristics of InGaN/AlGaN light-emitting diodes on sapphire substrates , 1997 .
[12] Fernando Ponce,et al. High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .
[13] Arpad Bergh,et al. The Promise and Challenge of Solid-State Lighting , 2001 .
[14] L. R. Dawson,et al. The Effect of Dislocations in Ga1 − x Al x As : Si Light‐Emitting Diodes , 1979 .
[15] Robert F. Davis,et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy , 1997 .
[16] Jung Han,et al. Low-Dislocation-Density GaN from a Single Growth on a Textured Substrate , 2000 .
[17] D. C. Reynolds,et al. Changes in electrical characteristics associated with degradation of InGaN blue light-emitting diodes , 2000 .
[18] Oliver Brandt,et al. Photoluminescence intensity of GaN films with widely varying dislocation density , 2003 .
[19] Akira Ishibashi,et al. High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes , 1995 .
[20] A. N. Kovalev,et al. Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence , 2001 .
[21] John C. Connolly,et al. 8 W continuous wave front‐facet power from broad‐waveguide Al‐free 980 nm diode lasers , 1996 .
[22] C. Donolato,et al. Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor , 1998 .
[23] James S. Speck,et al. The role of threading dislocations in the physical properties of GaN and its alloys , 1999 .