In this paper, we firstly introduce a simplified and reliable approach for the extraction of the crosstalk model parameters of high-speed on-chip and MCM interconnection lines. The voltage coupling coefficient, the mutual capacitance and the mutual inductance can be easily extracted from the S-parameter measurement and time-domain reflection measurement. In contrast to the previous extraction procedures of the crosstalk models, the suggested extraction procedure not only requires less on-wafer probing steps but also is close to physical insight. Also the models can be easily applicable to the SPICE simulation. The validity of the extracted model was examined by comparing the time-domain crosstalk pulse measurement using the TDR/T to the time domain pulse waveforms calculated using the SPICE simulation using the extracted model parameters. The close agreement of the amplitude and the pulse shape was observed, indicating the preciseness of the extracted crosstalk model.
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