论文信息 - E2-PROM TV synthesizer

E2-PROM TV synthesizer

A nonvolatile memory cell using two polysilicon layers and a single-polarity supply, affording safe operation above 104write-erase cycles, will be described. A TV tuning circuit, implementing logic and memory on the same device, has been realized.

[1] Toshio Wada. Electrically reprogrammable ROM using N-channel memory transistors with floating gate , 1977 .

[2] D. Dimaria,et al. Interface effects and high conductivity in oxides grown from polycrystalline silicon , 1975 .

[3] F. Masuoka,et al. Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure , 1976, IEEE Transactions on Electron Devices.