Optical band gap of indium nitride

Room‐temperature optical absorption data in the 1.5–2.5‐eV range are reported for indium nitride thin films prepared by reactive radio‐frequency sputtering. The fundamental absorption edge in high‐purity material is located at 1.89±0.01 eV and corresponds to a direct transition at k=0, in agreement with band‐structure calculations. A significant Moss‐Burstein shift is noted for carrier concentrations in excess of 1019 cm−3 and obeys the empirical relationship EG =1.89+2.1×10−8 n1/3 eV.

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