Defects at surfaces and interfaces — A scattering theoretical approach
暂无分享，去创建一个
[1] J. Pollmann,et al. Microscopic approach to the quantum size effect in superlattices , 1979 .
[2] S. Pantelides,et al. Electronic structure of Ge overlayers on (100) GaAs , 1979 .
[3] S. Pantelides,et al. New method for the electronic structure of heterojunctions — Application to the (100) Ge-GaAs interfaces , 1979 .
[4] J. Joannopoulos,et al. Double-dangling-bond defects and band bending at the GaAs (110) surface , 1979 .
[5] S. Pantelides,et al. Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and Si O 2 , 1978 .
[6] B. Djafari-Rouhani,et al. Surface and interface states of (111) faces of semiconductors , 1978 .
[7] N. O. Lipari,et al. Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in Silicon , 1978 .
[8] M. Schlüter,et al. Self-Consistent Green's-Function Calculation of the Ideal Si Vacancy , 1978 .
[9] D. Chadi,et al. (110) surface states of GaAs: Sensitivity of electronic structure to surface structure , 1978 .
[10] J. Bernholc,et al. Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs , 1978 .
[11] J. Joannopoulos,et al. A local formalism for the study of very large bonded systems , 1976 .
[12] P. Soven,et al. A green's function theory of surface states , 1971 .