论文信息 - Mid-infrared GaSb-based EP-VCSELl emitting at 2.63 μm

Mid-infrared GaSb-based EP-VCSELl emitting at 2.63 μm

Electrically-pumped GaSb-based vertical-cavity surface-emitting lasers emitting up to 2.63 μm at room temperature are reported. The whole structure was grown monolithically in one run by solid-source molecular beam epitaxy. This heterostructure is composed of two n-doped AlAsSb/GaSb DBRs, a type-I GaInAsSb/AlGaAsSb multi-quantum-well active region and an InAsSb/GaSb tunnel junction. A quasi-CW (1 μs, 5 %) operation was obtained at room temperature for 35 μm-diameter devices with threshold current of 85 mA.

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