Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

We aim at embedding a quantum dot on a suspended nanowire by solving the problem of unintentional quantum dot formation, which exacerbates in a suspended nanowire. The origin of this worsening is the higher potential barrier presumably owing to the enhancement of random-dopant-induced potential fluctuation and/or higher degree of surface roughness and surface trapped charges on suspended nanowires. The higher barrier was successfully decreased by adopting a higher doping concentration as well as wider constriction patterns. Consequently, we can control the quantum dot formation in the suspended nanowire and successfully defined a single-quantum dot by patterning the double constrictions on the heavily doped suspended nanowire.

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