Photoinduced Displacement Current in Polyimide Langmuir-Blodgett Films Deposited on Au Electrodes

The photoinduced displacement current across polyimide (PI) Langmuir-Blodgett (LB) films incorporated in Au/PI/air-gap/Au structures was investigated without the application of an external electric field. Transient displacement current was found to be produced by photoirradiation with a wavelength of 400 nm, because carriers were generated in PI LB films and were then conveyed along the electric field established in a Schottky depletion region in the PI LB films.