GaAs MESFET prepared by molecular beam epitaxy (MBE)

GaAs metal‐semiconductor field‐effect transistors (MESFET) have been prepared by molecular‐beam epitaxy. At 6 GHz a noise figure of 3 dB was obtained with a corresponding gain of 10 dB. The transconductance of the device was 28 mmhos and Fmax was approximately 35 GHz.