Micromagnetic simulation of microwave assisted switching in Ni80Fe20 thin film element

The authors demonstrate microwave assisted switching process of Ni80Fe20 thin film element with micromagnetics. Effects of microwave amplitude and frequency on the magnetization reversal were focused. Numerical results showed that the coercivity of Ni80Fe20 thin film element can be reduced by the modification of the microwave field, and the most evident reduction of coercivity was found at resonance frequencies. Considerable Fluctuations of switching fields are found at the natural resonance frequencies and high microwave amplitudes, which can be explained by scattering of nucleation sites induced by the thermal effect of the microwave filed.