Relationship between channel mobility and interface state density in SiC metal–oxide–semiconductor field-effect transistor
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Kenji Fukuda | Ryoji Kosugi | Shinsuke Harada | Seiji Suzuki | Kazuo Arai | Won-ju Cho | W. Cho | K. Fukuda | S. Harada | J. Senzaki | K. Arai | Seiji Suzuki | Junji Senzaki | R. Kosugi
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