论文信息 - Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn) - 字舞流文

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Kain Lu Low | Y. Yeo | G. Han | S. Su | Yue Yang | Lanxiang Wang | P. Guo | B. Cheng | X. Gong | C. Xue | Wei Wang | Guangze Zhang