Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation

We have used the pulsed time structure of the Cornell High-Energy Synchrotron Source (CHESS) to carry out a nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation. Time-resolved temperature distributions and interfacial overheating and undercooling were measured on and silicon during 25 ns UV laser pulses through the analysis of thermal expansion induced strain. The temperature gradients were found to be >10/sup 7/ K/cm at the liquid--solid interface and the temperature distributions have been shown to be in agreement with numerical heat flow calculations for these laser conditions. The combined overheating and undercooling (during approx.10 m/s melting and approx.6 m/s regrowth) was measured to be 110 +- 30 K on oriented silicon and 50 +- 25 K on silicon. These values have been interpreted in terms of velocity coefficients of overheating and undercooling.

[1]  R. F. Wood.  Macroscopic theory of pulsed-laser annealing. III. Nonequilibrium segregation effects , 1982 .

[2]  C. V. Shank,et al.  Energy beam-solid interactions and transient thermal processing/1984 : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A. , 1985 .

[3]  Y. S. Touloukian.  Thermophysical properties of matter , 1970 .

[4]  D. M. Mills,et al.  Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing , 1983 .

[5]  Michael J. Aziz,et al.  Model for solute redistribution during rapid solidification , 1982 .

[6]  B. Warren,et al.  X-Ray Diffraction , 2014 .

[7]  B. Larson,et al.  X‐ray study of lattice strain in boron implanted laser annealed silicon , 1980 .

[8]  P. P. Pronko,et al.  Effects of pulsed ruby‐laser annealing on As and Sb implanted silicon , 1979 .

[9]  D. Turnbull,et al.  Crystal growth kinetics of boron oxide under pressure , 1985 .

[10]  S. U. Campisano,et al.  Orientation and velocity dependence of solute trapping in Si , 1981 .

[11]  J. Burgeat,et al.  Application de la théorie dynamique de la diffraction X à l'étude de la diffusion du bore et du phosphore dans les cristaux de silicium , 1968 .

[12]  C. W. White,et al.  Laser and Electron Beam Processing of Materials , 1980 .

[13]  D. Mills,et al.  Nanosecond resolved X-ray diffraction during pulsed laser annealing of silicon , 1983 .

[14]  N. Bloembergen,et al.  Laser and Electron Beam Interactions with Solids , 1982 .

[15]  James A. Ibers,et al.  International tables for X-ray crystallography , 1962 .

[16]  D. M. Mills,et al.  Synchrotron x-ray diffraction study of silicon during pulsed laser annealing , 1982 .

[17]  Edward A. Feigenbaum,et al.  A correlation between crystallographic computing and artificial intelligence research , 1977 .

[18]  J. Bokor,et al.  Rapid melting and regrowth velocities in silicon heated by ultraviolet picosecond laser pulses , 1984 .

[19]  N. G. Chew,et al.  Orientation dependence of high speed silicon crystal growth from the melt , 1984 .

[20]  R. Yen,et al.  Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses , 1981 .

[21]  S. R. Wilson,et al.  Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon , 1980 .

[22]  G. J. Galvin,et al.  Solidification kinetics of pulsed laser melted silicon based on thermodynamic considerations , 1985 .