Carrier-induced fast wavelength switching in tunable V-cavity laser with quantum well intermixed tuning section.

We report on the fast wavelength switching in V-cavity laser (VCL) with quantum well intermixed tuning section. The laser wavelength can be switched between 32 channels at 100 GHz spacing using a single electrode control. The fabrication process involves a quantum well intermixing (QWI) process using KrF laser irradiation and rapid thermal annealing (RTA). The tuning current is less than 40 mA, much lower than previously demonstrated tunable VCL based on electro-thermal-optic effect. The wavelength switching is also faster by three orders of magnitude. The dynamic switching characteristics between two channels with different numbers of intermediate channels are investigated. It shows that the switching time is about 1 ns between adjacent channels and increases up to 12 ns with increasing number of intermediate channels.

[1]  J. Dubowski,et al.  Excimer laser induced quantum well intermixing: a reproducibility study of the process for fabrication of photonic integrated devices. , 2015, Optics express.

[2]  L.A. Coldren,et al.  Monolithic tunable diode lasers , 2000, IEEE Journal of Selected Topics in Quantum Electronics.

[3]  John H. Marsh,et al.  Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion , 1997 .

[5]  Lei Wang,et al.  Widely wavelength switchable V-coupled-cavity semiconductor laser with ∼40 dB side-mode suppression ratio. , 2011, Optics letters.

[6]  Larry A. Coldren,et al.  Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators , 2003 .

[7]  Lei Wang,et al.  Simple and compact V-cavity semiconductor laser with 50×100 GHz wavelength tuning. , 2013, Optics express.

[8]  Jian-Jun He,et al.  Wavelength switchable semiconductor laser using half-wave V-coupled cavities. , 2008, Optics express.

[9]  M. Buchanan,et al.  Photonic integrated circuits fabricated using ion implantation , 1998 .

[10]  Karl Hess,et al.  Disorder of an AlAs‐GaAs superlattice by impurity diffusion , 1981 .

[11]  John H. Marsh,et al.  Monolithic integration via a universal damage enhanced quantum-well intermixing technique , 1998 .

[12]  L. Coldren,et al.  Tunable sampled-grating DBR lasers using quantum-well intermixing , 2002, IEEE Photonics Technology Letters.

[13]  O. Hulko,et al.  The effect of different proximity caps on quantum well intermixing in InGaAsP/InP QW structures , 2006 .

[14]  J. Arokiaraj,et al.  Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing , 2004, IEEE Journal of Quantum Electronics.