Co-Doping Characteristics of Si and Zn with Mg in P-Type GaN
暂无分享,去创建一个
Gye Mo Yang | C. S. Oh | C. J. Youn | K. S. Kim | Hyung Jae Lee | J. W. Yang | M. S. Han | C. S. Kim | C.-H. Hong | K. Y. Lim
[1] Oliver Brandt,et al. High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant , 1996 .
[2] Chang-Hee Hong,et al. Magnesium acceptor levels in GaN studied by photoluminescence , 1998 .
[3] Materials design for the fabrication of low-resistivity p-type GaN using a codoping method , 1997 .
[4] Taeil Kim,et al. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment , 1998 .
[5] Michael Kunzer,et al. Nature of the 2.8 eV photoluminescence band in Mg doped GaN , 1998 .
[6] R. C. Weast. CRC Handbook of Chemistry and Physics , 1973 .
[7] C. S. Oh,et al. Effects of growth rate of a GaN buffer layer on the properties of GaN on a sapphire substrate , 1999 .
[8] J. Zolper,et al. Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal , 1996 .