A 205 GHz Amplifier With 10.5 dB Gain and $-$1.6 dBm Saturated Power Using 90 nm CMOS

Designing integrated circuits with CMOS technology in millimeter-wave (mm-wave) range is highly challenging. This letter presents a 205 GHz amplifier drawing 43.4 mA from a 0.9 V power supply with 10.5 dB power gain, saturated power of -1.6 dBm, and P1dB ≈ -5.8 dBm in a standard 90 nm CMOS process. Moreover, the design employs internal (layout-based)/ external (using passive embedding around the transistor) neutralization techniques for improving performance and yield of the overall system while achieving optimum operation state and reducing the effect of dominant internal parasitic capacitors. The fabricated amplifier has the highest operation frequency among all reported amplifiers in 90 nm and greater CMOS technologies.

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