1200V 6A SiC BJTs with very low VCESAT and fast switching

This paper reports measurements and simulations made on 1200V 6A Silicon carbide (SiC) bipolar junction transistors. A SPICE model for the transistor has been developed and verified by static and dynamic measurements. Fast switching and low on state losses have been measured and SPICE simulated on the component level. To further describe the impact on a systems level a simplified boost converter has been simulated with regards to power losses and cooling.