Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates

Prospective equivalent internal quantum efficiency (ηint) of approximately 34% at 300K was demonstrated for the blue emission peak of nonpolar m-plane (11¯00) InxGa1−xN∕GaN multiple quantum well light emitting diodes (LEDs) fabricated on freestanding m-plane GaN substrates. Although the ηint value is yet lower than that of conventional c-plane blue LEDs (>70%), the results encourage one to realize high performance green, amber, and red LEDs by reducing the concentration of nonradiative defects, according to the absence of the quantum-confined Stark effects due to the polarization fields parallel to the quantum well normal. The electric field component of the blue surface emission was polarized perpendicular to the c axis with the in-plane polarization ratio of 0.58 at 300K.

[1]  S. Denbaars,et al.  Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate , 2005 .

[2]  James S. Speck,et al.  Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth , 2005 .

[3]  S. Denbaars,et al.  Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy , 2005 .

[4]  S. Denbaars,et al.  Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates , 2005 .

[5]  James S. Speck,et al.  Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak , 2004 .

[6]  James S. Speck,et al.  Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth , 2004 .

[7]  James S. Speck,et al.  Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells , 2004 .

[8]  Vinod Adivarahan,et al.  Ultraviolet Light Emitting Diodes Using Non-Polar a-Plane GaN-AlGaN Multiple Quantum Wells , 2003 .

[9]  Shuji Nakamura,et al.  Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate , 2003 .

[10]  Yue Sun,et al.  Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells , 2003 .

[11]  S. Denbaars,et al.  Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition , 2003 .

[12]  Grigory Simin,et al.  Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells , 2002 .

[13]  H. M. Ng,et al.  Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (101̄2) sapphire substrates , 2002 .

[14]  P. Paskov,et al.  Anisotropy of the free exciton emission in GaN grown on a-plane sapphire , 2002 .

[15]  Oliver Brandt,et al.  Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy , 2002 .

[16]  S. Denbaars,et al.  Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes , 2001 .

[17]  Takashi Mukai,et al.  Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes , 2000 .

[18]  M. Reiche,et al.  Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes , 2000, Nature.

[19]  L. Coldren,et al.  Optical properties of InGaN quantum wells , 1999 .

[20]  Shigeru Nakagawa,et al.  Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect , 1998 .

[21]  S. Nakamura,et al.  Optical properties of wurtzite GaN epilayers grown on A -plane sapphire , 1998 .

[22]  F. Bernardini,et al.  MACROSCOPIC POLARIZATION AND BAND OFFSETS AT NITRIDE HETEROJUNCTIONS , 1997, cond-mat/9712245.

[23]  Akito Kuramata,et al.  Analysis of polarization anisotropy along the c axis in the photoluminescence of wurtzite GaN , 1997 .

[24]  Isamu Akasaki,et al.  Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters , 1997 .

[25]  Isamu Akasaki,et al.  Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells , 1997 .

[26]  Shuji Nakamura,et al.  The Blue Laser Diode: GaN based Light Emitters and Lasers , 1997 .

[27]  S. Nakamura,et al.  Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .