RF CMOS inductor shielded by a high-impedance surface
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We propose a high-performance inductor based on the concept of a high-impedance surface (or artificial magnetic conductor). The inductor is shielded from the silicon substrate by a high-impedance surface consisting of a lumped capacitor and inductor. Theoretical calculations comparing the proposed inductor with a conventional inductor shielded by an ordinary metal surface show that the resonant frequency and quality factor (Q) in the millimeter-wave region are higher for the proposed inductor.
[1] D. Sievenpiper,et al. High-impedance electromagnetic surfaces with a forbidden frequency band , 1999 .
[2] C. Fischer,et al. Planar artificial magnetic conductors and patch antennas , 2003 .
[3] Tatsuo Itoh,et al. A novel TEM waveguide using uniplanar compact photonic-bandgap (UC-PBG) structure , 1999 .