论文信息 - Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probe

Potential distribution and field dependence of electron velocity in bulk GaAs measured with a point-contact probe

The voltage distribution in GaAs has been measured by probing the potential along the surface of a lightly doped bulk-GaAs wafer. Using this distribution, the field dependence of the electron velocity was calculated. The mobility was found to be negative for electric fields between 3900 V/cm and approximately 7000 V/cm.

H. Thim

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