RF modeling issues of deep-submicron MOSFETs for circuit design

This paper provides an overview of important issues in CMOS MOSFET modeling for radio frequency (RF) applications. Beginning with a brief review of state-of-the-art of RF CMOS technology, we discuss modeling issues that need to be resolved to meet the requirements from circuit designers. Then, we present our current achievements and activities in compact MOSFET modeling for RF circuit design.

[1]  A. A. Abidi Low-power RF-ICs in wireless transceivers , 1994, Proceedings of 1994 IEEE Symposium on Low Power Electronics.

[2]  Paul R. Gray,et al.  CMOS RF modeling for GHz communication IC's , 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

[3]  R. Gharpurey,et al.  RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[4]  Mansun Chan,et al.  A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation , 1997 .

[5]  P. Klein A compact-charge LDD-MOSFET model , 1997 .

[6]  Qiuting Huang,et al.  Broadband, 0.25 /spl mu/m CMOS LNAs with sub-2dB NF for GSM applications , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).

[7]  S. H. Jen,et al.  Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .

[8]  D. Hisamoto,et al.  Silicon RF devices fabricated by ULSI processes featuring 0.1-/spl mu/m SOI-CMOS and suspended inductors , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.

[9]  Mau-Chung Frank Chang,et al.  High-frequency application of MOS compact models and their development for scalable RF model libraries , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).