The switching behaviour of the shorted anode base resistance MOS-controlled thyristor

Abstract The electrical performance of a shorted anode BRT structure is described. It is shown that the inclusion of the back side shorted anode structure reduces the BRT transient losses since it allows a direct path for the extraction of electrons stored in the N − region during the turn-off process. The static and transient device operation has been analysed by numerical simulations. The reduction of the turn-off losses has been experimentally demonstrated by experimental data from fabricated 1100 V multicell structures.