Growth of BxGa1-xAs, BxAl1-xAs and BxGa1-x-yInyAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition

High quality zinc-blende B"xGa"1"-"xAs, B"xAl"1"-"xAs, B"xGa"1"-"x"-"yIn"yAs and relevant MQW structures containing 10-period BGaAs/GaAs and BGaInAs/GaAs have been successfully grown on exactly-oriented (001)GaAs substrates by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron, trimethylgallium, trimethylaluminum, trimethylindium and arsine were used as the precursors. Boron incorporation behaviors have been studied as a function of growth temperature and gas-phase boron mole fraction. In this study, the maximum boron composition (x) of 5.8% and 1.3% was achieved at the same growth temperature of 580^oC for bulk B"xGa"1"-"xAs and B"xAl"1"-"xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched B"xGa"1"-"x"-"yIn"yAs epilayer with boron composition of about 4% reached 1.24@mm.

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