论文信息 - Wide bandgap semiconductor materials and devices

Wide bandgap semiconductor materials and devices

Given a matrix of all semiconductor materials and their properties, the highest and the lowest of these property values will almost always be associated with wide bandgap materials. The many possible combinations of these "poles and zeros" lead not only to superlative electron device performance, but to new device concepts as well. An overview of wide bandgap semiconductor properties is presented followed by several concepts for both new and enhanced devices. Finally, impediments to immediate exploitation and a time-oriented appraisal of the various materials and devices is presented.

M. N. Yoder | M. Yoder

[1] W. Lambrecht. Electronic Structure of Diamond, Silicon Carbide, and the Group-III Nitrides , 1994 .

[2] J. Reinhardt,et al. Monte‐Carlo Approach of Electron Emission from SiO2 , 1984 .

[3] R. W. Keyes,et al. Figure of merit for semiconductors for high-speed switches , 1972 .

[4] M. Ikeda,et al. Structural study of degraded ZnMgSSe blue light emitters , 1996 .

[5] W. C. Hughes,et al. II–VI blue/green laser diodes on ZnSe substrates , 1996 .

[6] B. J. Baliga,et al. Power semiconductor device figure of merit for high-frequency applications , 1989, IEEE Electron Device Letters.

[7] J. Palmour,et al. Conductivity Anisotropy in Epitaxial 6H and 4H Sic , 1994 .

[8] M. Shur,et al. Double base hot electron transistor , 1988 .

[9] E. Johnson. Physical limitations on frequency and power parameters of transistors , 1965 .

[10] T. P. Chow,et al. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices , 1994 .

[11] M. Melloch,et al. Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide , 1996, IEEE Electron Device Letters.