论文信息 - Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs

Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs

The impact of body doping and thickness on the performance of a germanium-source tunnel field-effect transistor in which band-to-band tunneling occurs entirely within the source region is investigated via 2-D device simulations calibrated to experimental data. It is found that the dominant leakage mechanism varies depending on the body design parameter values. A moderately doped (1018 cm-3) body that is not fully depleted provides for the best transistor performance.

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