GaAs E-mode pHEMT 반도체 공정을 이용한 자동차 용 GPS/XM dual band 고주파 반도체(RFIC) 개발

A one-chip RFIC low noise amplifier for GPS/XM dual band automotive antenna is fabricated with 0.5m GaAs enhanced-mode pHEMT technology. A novel MMIC circuit design is implemented to reduce the external matching components of the RFIC, resulting in a considerable enhancement of the reliability in GPS/XM antenna system. A noise figure of 0.73 dB in 2330 MHz XM band and 1.14 dB in 1575 MHz GPS band was achieved with a small foot-print one-chip RFIC, in which the number of matching components was reduced by 46% compared to an existing GPS/XM antenna system.