A fuzzy-logic-based approach to accurate modeling of a double gate MOSFET for nanoelectronic circuit design

The double gate (DG) silicon MOSFET with an extremely short-channel length has the appropriate features to constitute the devices for nanoscale circuit design. To develop a physical model for extremely scaled DG MOSFETs, the drain current in the channel must be accurately determined under the application of drain and gate voltages. However, modeling the transport mechanism for the nanoscale structures requires the use of overkill methods and models in terms of their complexity and computation time (self-consistent, quantum computations, ...). Therefore, new methods and techniques are required to overcome these constraints. In this paper, a new approach based on the fuzzy logic computation is proposed to investigate nanoscale DG MOSFETs. The proposed approach has been implemented in a device simulator to show the impact of the proposed approach on the nanoelectronic circuit design. The approach is general and thus is suitable for any type of nanoscale structure investigation problems in the nanotechnology industry.

[1]  D. Jimenez,et al.  Explicit Analytical Charge and Capacitance Models of Undoped Double-Gate MOSFETs , 2007, IEEE Transactions on Electron Devices.

[2]  I. G. Sarma,et al.  Performance evaluation of two fuzzy-logic-based homing guidance schemes , 1994 .

[3]  Jean-Pierre Colinge,et al.  Multiple-gate SOI MOSFETs , 2004 .

[4]  Rodrigo Picos,et al.  Optimized parameter extraction using fuzzy logic , 2007 .

[5]  C. Zetterling,et al.  Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications , 2002 .

[6]  L. Zadeh,et al.  An Introduction to Fuzzy Logic Applications in Intelligent Systems , 1992 .

[7]  Mark S. Lundstrom,et al.  Simulating Quantum Transport in Nanoscale MOSFETs: Real vs. Mode Space Approaches , 2002 .

[8]  P. Hergenrother,et al.  Reply to 'Small molecules not direct activators of caspases' , 2007, Nature Chemical Biology.

[9]  Giuseppe De Pietro,et al.  An ontology-based fuzzy decision support system for multiple sclerosis , 2011, Eng. Appl. Artif. Intell..

[10]  Daniela Munteanu,et al.  Quantum short-channel compact modeling of drain-current in double-gate MOSFET , 2005 .

[11]  D. Munteanu,et al.  Quantum short-channel compact modeling of drain-current in double-gate MOSFET , 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

[12]  M. L. Hafiane,et al.  Numerical analysis of Double Gate and Gate All Around MOSFETs with bulk trap states , 2008 .

[13]  Y. Taur,et al.  A continuous, analytic drain-current model for DG MOSFETs , 2004 .

[14]  M. Chahdi,et al.  An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter , 2007 .

[15]  Meng-Hsueh Chiang,et al.  Speed superiority of scaled double-gate CMOS , 2002 .

[16]  Daniel P. Foty,et al.  MOSFET Modeling With SPICE: Principles and Practice , 1996 .

[17]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[18]  F. Djeffal,et al.  A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All Around MOSFETs , 2008 .

[19]  Thierry Poiroux,et al.  Continuous model for independent double gate MOSFET , 2009 .

[20]  G. Baccarani,et al.  A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects , 1999 .

[21]  C. Fiegna,et al.  Analysis of Scaling Strategies for Sub-30 nm Double-Gate SOI N-MOSFETs , 2007, IEEE Transactions on Nanotechnology.

[22]  F. Djeffal,et al.  A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs , 2011, Microelectron. J..

[23]  S. Datta,et al.  nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs , 2003 .

[24]  G. Gildenblat,et al.  PSP-based scalable compact FinFET model , 2007 .

[25]  Tor A. Fjeldly,et al.  Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs , 2008, Math. Comput. Simul..