论文信息 - Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias - 字舞流文

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

H. A. Moghadam | S. Dimitrijev | Baikui Li | P. Tanner | Jisheng Han | Jiannong Wang | Xi Tang | Hui Li