Recombination in a-Si:H Based Materials: Evidence for Two Slow Radiative Processes
暂无分享,去创建一个
[1] D. Dunstan,et al. Temperature dependence of carrier lifetimes in a-Si:H , 1985 .
[2] D. Dunstan,et al. Photoconductivity measurements in a-Si:H by frequency-resolved spectroscopy , 1984 .
[3] D. Dunstan,et al. Photoluminescence in hydrogenated amorphous silicon , 1984 .
[4] R. Collins,et al. Saturation of band tail states in a-Si:H , 1983 .
[5] I. G. Austin,et al. Luminescence lifetime distributions in μc-Si and glow discharge and sputtered a-Si:H , 1983 .
[6] R. Street,et al. Anomalous surface photoconductivity in hydrogenated amorphous silicon , 1983 .
[7] D. Dunstan,et al. A direct determination of the lifetime distribution of the 1.4 eV luminescence of a-Si:H , 1982 .
[8] R. Collins,et al. Nongeminate radiative recombination in sputtered and glow discharge a -Si:H , 1982 .
[9] R. Street. Luminescence and recombination in hydrogenated amorphous silicon , 1981 .
[10] R. Devonshire,et al. Radiative and non-radiative tunnelling in glow-discharge and sputtered amorphous silicon , 1979 .
[11] S. Mantl,et al. Positron annihilation studies on electron- and α-particle-irradiated 75Nil3Crl2Fe alloys , 1979 .
[12] R. Street,et al. Recombination in plasma-deposited amorphous Si:H. Luminescence decay , 1979 .