Hot-electron relaxation effects in devices☆

Abstract Whenever the electric field in a device varies sufficiently rapidly with distance and/or time, significant deviations of the electron drift velocity from the static velocity-field characteristic occur. These relaxation effects manifest themselves not only in the high-frequency properties, but also in the static device properties of devices such as transferred-electron devices and field-effect transistors. Important quasi-static effects are drift velocity overshoot in FET's and relaxation effects in the bistable switching in TE devices. The ultimate speed limitations of TE devices are governed by relaxation effects. Transit-time modes are superior to the LSA mode, barrier-type contacts to n + -on- n contacts, and InP to GaAs.

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