Electron-phonon interaction in tetrahedral semiconductors

Abstract Considerable progress has been made in recent years in the field of ab initio calculations of electronic band structures of semiconductors and insulators. The one-electron states (and the concomitant two-particle excitations) have been obtained without adjustable parameters, with a high degree of reliability. Also, more recently, the electron–hole excitation frequencies responsible for optical spectra have been calculated. These calculations, however, are performed with the constituent atoms fixed in their crystallographic positions and thus neglect the effects of the lattice vibrations (i.e. electron–phonon interaction) which can be rather large, even larger than the error bars assumed for ab initio calculations. Effects of electron–phonon interactions on the band structure can be experimentally investigated in detail by measuring the temperature dependence of energy gaps or critical points (van Hove singularities) of the optical excitation spectra. These studies have been complemented in recent years by observing the dependence of such spectra on isotopic mass whenever different stable isotopes of a given atom are available at affordable prices. In crystals composed of different atoms, the effect of the vibration of each separate atom can thus be investigated by isotopic substitution. Because of the zero-point vibrations, such effects are present even at zero temperature ( T =0). In this paper, we discuss state-of-the-art calculations of the dielectric function spectra and compare them with experimental results, with emphasis on the differences introduced by the electron–phonon interaction. The temperature dependence of various optical parameters will be described by means of one or two (in a few cases three) Einstein oscillators, except at the lowest temperatures where the T 4 law (contrary to the Varshni T 2 result) will be shown to apply. Increasing an isotopic mass increases the energy gaps, except in the case of monovalent Cu (e.g. CuCl) and possibly Ag (e.g. AgGaS 2 ). It will be shown that the gaps of tetrahedral materials containing an element of the first row of the periodic table (C,N,O) are strongly affected by the electron–phonon interaction. It will be conjectured that this effect is related to the superconductivity recently observed in heavily boron-doped carbon.

[1]  F. Wooten,et al.  Optical Properties of Solids , 1972 .

[2]  H. Y. Fan Temperature Dependence of the Energy Gap in Semiconductors , 1951 .

[3]  A. D. Bock,et al.  Pressure dependence of the viscosity of liquid argon and liquid oxygen, measured by means of a torsionally vibrating quartz crystal , 1967 .

[4]  J. Bardeen,et al.  Deformation Potentials and Mobilities in Non-Polar Crystals , 1950 .

[5]  G. G. Stokes "J." , 1890, The New Yale Book of Quotations.

[6]  R. Pässler Semi‐empirical descriptions of temperature dependences of band gaps in semiconductors , 2003 .

[7]  Louie,et al.  Electron correlation in semiconductors and insulators: Band gaps and quasiparticle energies. , 1986, Physical review. B, Condensed matter.

[8]  Stefan Albrecht Lucia Reining Rodolfo Del Sole Giovanni Onida Ab Initio Calculation of Excitonic Effects in the Optical Spectra of Semiconductors , 1998 .

[9]  H. Gebbie,et al.  Cyclotron Resonance at Infrared Frequencies in InSb at Room Temperature , 1956 .

[10]  M. Cardona,et al.  Deformation potentials of the direct gap of diamond , 1986 .

[11]  Allen,et al.  Phonon-induced lifetime broadenings of electronic states and critical points in Si and Ge. , 1986, Physical review. B, Condensed matter.

[12]  S. Baroni,et al.  Dependence of the crystal lattice constant on isotopic composition: Theory and ab initio calculations for C, Si, and Ge , 1994 .

[13]  J. Zegenhagen,et al.  Anomalous isotopic effect on the lattice parameter of silicon. , 2002, Physical review letters.

[14]  Manuel Cardona,et al.  Light Scattering in Solids VII , 1982 .

[15]  T. F. Smith,et al.  The low-temperature thermal expansion and Gruneisen parameters of some tetrahedrally bonded solids , 1975 .

[16]  M. Cardona,et al.  Electron-phonon effects on the direct band gap in semiconductors: LCAO calculations , 2002 .

[17]  D. Strauch,et al.  Anharmonic line shift and linewidth of the Raman mode in covalent semiconductors , 1999 .

[18]  Steven G. Louie,et al.  Electron-Hole Excitations in Semiconductors and Insulators , 1998 .

[19]  Contribution of quantum and thermal fluctuations to the elastic moduli and dielectric constants of covalent semiconductors. , 1996, Physical review. B, Condensed matter.

[20]  A. Leclerc,et al.  Determination of the dilation and vibrational contributions to the indirect energy band gap of diamond semiconductor , 1979 .

[21]  M. De Handbuch der Physik , 1957 .

[22]  Collins,et al.  Indirect energy gap of 13C diamond. , 1990, Physical review letters.

[23]  Rodríguez,et al.  Effect of isotope concentration on the lattice parameter of germanium perfect crystals. , 1988, Physical review. B, Condensed matter.

[24]  M. Konuma,et al.  Photoluminescence studies of isotopically enriched silicon: isotopic effects on the indirect electronic band gap and phonon energies , 2002 .

[25]  A. Maradudin,et al.  Dynamical properties of solids , 1985 .

[26]  M. Cardona,et al.  Linear muffin-tin-orbital and k.p calculations of effective masses and band structure of semiconducting diamond , 1994 .

[27]  A. Onton,et al.  Temperature dependence of the band gap of silicon , 1974 .

[28]  H. Riemann,et al.  Photoluminescence of isotopically purified silicon: how sharp are bound exciton transitions? , 2001, Physical review letters.

[29]  Erratum: Effect of isotopic composition on the lattice parameter of germanium measured by x-ray backscattering [Phys. Rev. B 67 , 113306 (2003)] , 2004 .

[30]  M. Cardona,et al.  Phonon self-energies in semiconductors: anharmonic and isotopic contributions , 2001 .

[31]  M. Schlüter,et al.  Density-Functional Theory of the Energy Gap , 1983 .

[32]  COMMENT ON: AB INITIO CALCULATION OF EXCITONIC EFFECTS IN THE OPTICAL SPECTRA OF SEMICONDUCTORS. AUTHORS' REPLY , 1999 .

[33]  L. F. Lastras-Martínez,et al.  Isotopic effects on the dielectric response of Si around the E 1 gap , 2000 .

[34]  Yasumasa Okada,et al.  Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 K , 1984 .

[35]  M. A. Hernández-Fenollosa,et al.  Effect of isotopic mass on the photoluminescence spectra of zinc oxide , 2003 .

[36]  Y. P. Varshni Temperature dependence of the energy gap in semiconductors , 1967 .

[37]  Gebhardt,et al.  Absorption edge of Zn1-xMnxTe under hydrostatic pressure. , 1986, Physical review. B, Condensed matter.

[38]  M. Cardona,et al.  Temperature dependence of the refractive index of diamond up to 925 K , 2000 .

[39]  M. Cardona,et al.  Electron-phonon renormalization of the absorption edge of the cuprous halides , 2002 .

[40]  M. Cardona,et al.  Spin–orbit splitting in diamond: excitons and acceptor related states , 2000 .

[41]  Gopalan,et al.  Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors. , 1992, Physical review. B, Condensed matter.

[42]  J. Chelikowsky,et al.  Electronic Structure and Optical Properties of Semiconductors , 1989 .

[43]  R. Pässler,et al.  Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors , 1999 .

[44]  P. Y. Yu,et al.  Fundamentals of Semiconductors , 1995 .

[45]  F. Herman Theoretical Investigation of the Electronic Energy Band Structure of Solids , 1958 .

[46]  L. F. Lastras-Martínez,et al.  Isotope effects on the electronic critical points of germanium: Ellipsometric investigation of the and transitions , 1998 .

[47]  C. Kittel,et al.  Spin-Orbit Interaction and the Effective Masses of Holes in Germanium , 1954 .

[48]  J. Christensen Doctoral thesis , 1970 .

[49]  M. Thewalt,et al.  Temperature dependence of the energy gap of semiconductors in the low-temperature limit. , 2004, Physical Review Letters.

[50]  V. T. Agekyan Spectroscopic properties of semiconductor crystals with direct forbidden energy gap , 1977 .

[51]  B. Marí,et al.  Effect of N isotopic mass on the photoluminescence and cathodoluminescence spectra of gallium nitride , 2004 .

[52]  Stergios Logothetidis,et al.  Temperature dependence of the dielectric function of germanium , 1984 .

[53]  Y. Tsang,et al.  Calculation of the Temperature Dependence of the Energy Gaps in PbTe and SnTe , 1971 .

[54]  M. Fox Optical Properties of Solids , 2010 .

[55]  E. Antončík On the theory of temperature shift of the absorption curve in non-polar crystals , 1955 .

[56]  Ramdas,et al.  Effect of isotopic constitution of diamond on its elastic constants: 13C diamond, the hardest known material. , 1993, Physical review letters.

[57]  B. Lax Experimental Investigations of the Electronic Band Structure of Solids , 1958 .

[58]  J. Grun,et al.  Etude spectrophotometrique des spectres continus de Cu2O a diverses temperatures , 1961 .

[59]  Renormalization of the Optical Response of Semiconductors by Electron-Phonon Interaction , 2001, cond-mat/0108160.

[60]  Ramdas,et al.  Electronic band structure of isotopically pure germanium: Modulated transmission and reflectivity study. , 1994, Physical review. B, Condensed matter.

[61]  P. J. Dean,et al.  Intrinsic edge absorption in diamond , 1964, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[62]  M. Konuma,et al.  X-ray standing wave analysis of the effect of isotopic composition on the lattice constants of Si and Ge. , 2001, Physical review letters.

[63]  V. Sidorov,et al.  Superconductivity in diamond , 2004, Nature.

[64]  Manuel Cardona,et al.  Temperature dependence of the direct gap of Si and Ge , 1983 .

[65]  M. Thewalt,et al.  Sulfur isotope effects on the excitonic spectra of CdS , 2004 .

[66]  Stefano de Gironcoli,et al.  Phonons and related crystal properties from density-functional perturbation theory , 2000, cond-mat/0012092.

[67]  Alan F. Gibson,et al.  Progress in Semiconductors , 1958 .

[68]  Cardona,et al.  Isotopic effects on the lattice constant in compound semiconductors by perturbation theory: An ab initio calculation. , 1996, Physical review. B, Condensed matter.