论文信息 - A low-temperature (<or= 500 degrees C) silicon-germanium MOS thin-film transistor technology for large-area electronics

A low-temperature (

N- and p-channel MOS thin-film transistors (TFTs) have been fabricated in LPCVD (low-pressure chemical vapor deposited) polycrystalline silicon-germanium (poly-SiGe) films using a low-temperature (maximum process temperature 550 degrees C) fabrication process. Since a poly-SiGe TFT technology allows the use of lower anneal temperatures and shorter anneal times than a poly-Si TFT technology, it is attractive for large-area electronics applications.<<ETX>>

Krishna C. Saraswat | Tsu-Jae King | K. Saraswat | T. King

[1] K. Saraswat,et al. PMOS transistors in LPCVD polycrystalline silicon-germanium films , 1991, IEEE Electron Device Letters.

[2] T. Kamins,et al. Effect of oxygen on minority‐carrier lifetime and recombination currents in Si1−xGex heterostructure devices , 1991 .

[3] H. Ohshima,et al. Future trends for TFT integrated circuits on glass substrates , 1989, International Technical Digest on Electron Devices Meeting.

[4] T. Pearsall. Silicon-germanium alloys and heterostructures: Optical and electronic properties , 1989 .

[5] Y. Nagae,et al. Peripheral circuit integrated poly-Si TFT LCD with gray scale representation , 1988, Conference Record of the 1988 International Display Research Conference.

[6] D. Antoniadis,et al. Comparison of different techniques for passivation of small-grain polycrystalline-Si MOSFET's , 1985, IEEE Electron Device Letters.