ACTIVE GATE DRIVERS FOR MOSFETS WITH CIRCUIT FOR dv/dt CONTROL

At this article is presented one scheme realization and exploring at active gate control of MOSFET, by the method at directly measuring at Drain voltage and of negative feedback by du/dt. Described is the applications method and is made analysis at transient processes at the scheme for control. The graphical aspect of transient processes at control circuit and at power circuit of MOSFET are given, adequately at status turn - on and turn - off. The principle of active gate control is improved losses and EMI emission in power converters.

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