Novel UV devices on high-quality AlGaN using grooved underlying layer

Abstract A grooved Al 0.25 Ga 0.75 N underlying layer on an AlN-coated sapphire substrate was used to grow crack free and low dislocation density Al 0.25 Ga 0.75 N to successfully realize high-performance UV A light emitters. A light-emitting diode grown on a grooved AlGaN underlying layer exhibited an output power of 12 mW at a DC current of 50 mA for a peak emission wavelength of 345 nm with an external quantum efficiency of 6.7%, which is the highest to date in this wavelength region. We also fabricated UV A laser diodes with an emission wavelength of 356 nm at a pulsed injection current of 414 mA.

[1]  Michael S. Shur,et al.  AlGaN single-quantum-well light-emitting diodes with emission at 285 nm , 2002 .

[2]  Shuji Nakamura,et al.  292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base , 2003 .

[3]  Kazuyoshi Iida,et al.  Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates , 2006 .

[4]  G. Simin,et al.  Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate , 2002 .

[5]  S. Kamiyama,et al.  Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE , 2004 .

[6]  Koji Ishibashi,et al.  High-Efficiency 352 nm Quaternary InAlGaN-Based Ultraviolet Light-Emitting Diodes Grown on GaN Substrates , 2004 .

[7]  Henryk Temkin,et al.  AlGaInN-based ultraviolet light-emitting diodes grown on Si 111 , 2002 .

[8]  David B. Slater,et al.  High efficiency GaN-based LEDs and lasers on SiC , 2004 .

[9]  Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes : Semiconductors , 2001 .

[10]  Zhihong Yang,et al.  Ultraviolet InAlGaN Light Emitting Diodes Grown on Hydride Vapor Phase Epitaxy AlGaN/Sapphire Templates , 2006 .

[11]  Hirofumi Kan,et al.  Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate , 2007 .

[12]  Grigory Simin,et al.  324 nm Light Emitting Diodes With MilliWatt Powers : Semiconductors , 2002 .

[13]  Zhihong Yang,et al.  Ultraviolet semiconductor laser diodes on bulk AlN , 2007 .

[14]  M. M. Wong,et al.  AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition , 2003 .