论文信息 - Nanostructures in GaAs fabricated by molecular beam epitaxy

Nanostructures in GaAs fabricated by molecular beam epitaxy

We review three novel techniques whereby the highly uniform two-dimensional films produced by molecular beam epitaxy (MBE) can be further patterned into nanowires or nanostructures having quantum confinement in all three dimensions. These techniques have the potential of greatly extending the power and utility of the MBE method.

Hidefumi Akiyama | Loren N. Pfeiffer | Kenneth W. West | Robert L. Willett | Leonid P. Rokhinson

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