Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapour deposition
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[1] R. Adam,et al. High Tc Y‐Ba‐Cu‐O thin films prepared by in situ low‐temperature codeposition of Y, BaF2, and Cu on α‐Al2O3 substrates , 1990 .
[2] K. Char,et al. Properties of epitaxial YBa2Cu3O7 thin films on Al2O3 {1̄012} , 1990 .
[3] Mahmudur Rahman,et al. Interface analysis of Y-Ba-Cu-O films on Al-coated Si substrates , 1989 .
[4] M. Ishida,et al. Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures , 1988 .
[5] M. Ishida,et al. Epitaxial Al2O3 films on Si by low‐pressure chemical vapor deposition , 1988 .
[6] Shin Hashimoto,et al. Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling , 1985 .
[7] L. Irving,et al. The deposition of insulators onto InP using plasma-enhanced chemical vapour deposition , 1981 .
[8] L. Meiners,et al. Electrical properties of SiO2 and Si3N4 dielectric layers on InP , 1981 .
[9] D. A. Collins,et al. Inversion layers on InP , 1979 .
[10] D. Fritzsche. InP--SiO 2 m.i.s. structure with reduced interface state density near conduction band , 1978 .
[11] L. Messick. InP/SiO2 MIS structure , 1976 .
[12] Carl W. Wilmsen,et al. Physics and chemistry of III-V compound semiconductor interfaces , 1985 .
[13] G. E. Smith,et al. MOS field-effect transistors and integrated circuits , 1973 .
[14] S. M. Sze,et al. Physics of semiconductor devices , 1969 .