论文信息 - On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon

On the nature of the kink in the carrier profile for phosphorus‐diffused layers in silicon

The mechanism of formation of the kink in the impurity profile of phosphorus‐diffused layers in silicon is shown to be related to the ``tail'' that is formed during low‐temperature heat treatments. The concentration at which the tail is formed is a function of temperature with an activation energy of 0.79 eV. The enhanced diffusion which gives rise to the tail depends on processes occurring in the high‐concentration region. A complex model is required to explain all of these results.

D. L. Kendall | F. N. Schwettmann | Don L. Kendall | F. Schwettmann

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