Optical properties of erbium-doped organic polydentate cage complexes

The optical properties of different erbium (Er)-doped polydentate hemispherand organic cage complexes are studied, for use in polymer-based planar optical amplifiers. Room temperature photoluminescence at 1.54 um is observed, due to an intra-4 f transition in Er31. The Er is directly excited into one of the 4 f manifolds (at 488 nm), or indirectly (at 287 nm) via the aromatic part of the cage. The luminescence spectrum is 70 nm wide (full width at half maximum), the highest known for any Er-doped material, enabling high gain bandwidth for optical amplification. The absorption cross section at 1.54 um is 1.1x10 -20 cm2, higher than in most other Er-doped materials, which allows the attainment of high gain. Measurements were performed on complexes in KBr tablets, in which the complex is present in the form of small crystallites, or dissolved in the organic solvents dimethylformamide and butanol-OD. In KBr the luminescence lifetime at 1.54 um is <0.5 us, possibly due to concentration quenching effects. In butanol-OD solution, the lifetime is 0.8 us, still well below the radiative lifetime of 4 ms estimated from the measured absorption cross sections. Experiments on the selective deuteration of the near-neighbor C–H bonds around the Er3+-ion indicate that these are not the major quenching sites of the Er31 luminescence. Temperature dependent luminescence measurements indicate that temperature quenching is very small. It is therefore concluded that an alternative luminescence quenching mechanism takes place, presumably due to the presence of O–H groups on the Er-doped complex (originating either from the synthesis or from the solution). Finally a calculation is made of the gain performance of a planar polymer waveguide amplifier based on these Er complexes, resulting in a threshold pump power of 1.4 mW and a typical gain of 1.7 dB /cm.

[1]  T. Kitagawa,et al.  Erbium-doped silica-based waveguide amplifier integrated with a 980/1530 nm WDM coupler , 1994 .

[2]  R. C. Kistler,et al.  Optical doping of waveguide materials by MeV Er implantation , 1991 .

[3]  Renata Reisfeld,et al.  Lasers and Excited States of Rare Earths , 1977 .

[4]  Emmanuel Desurvire,et al.  The Golden Age of Optical Fiber Amplifiers , 1994 .

[5]  G. N. van den Hoven,et al.  Absorption and emission cross sections of Er(3+) in Al(2)O(3) waveguides. , 1997, Applied optics.

[6]  E. Desurvire LIGHTWAVE COMMUNICATIONS : THE FIFTH GENERATION , 1992 .

[7]  A. J. Bruce,et al.  Concentration and Hydroxyl Impurity Quenching of the 4 I 13/2 – 4 I 15/2 Luminescence in Er 3+ Doped Sodium Silicate Glasses , 1991 .

[8]  Yingchao Yan,et al.  Luminescence quenching by OH groups in highly Er-doped phosphate glasses , 1995 .

[9]  G. N. van den Hoven,et al.  Optical doping of soda‐lime‐silicate glass with erbium by ion implantation , 1993 .

[10]  E. Sveshnikova,et al.  The application of luminescence-kinetic methods in the study of the formation of lanthanide ion complexes in solution , 1994 .

[11]  Mk Meint Smit,et al.  Upconversion in Er-implanted Al2O3 waveguides , 1996 .

[12]  J. Wang,et al.  Erbium-doped ion-exchanged waveguide lasers in BK-7 glass , 1992, IEEE Photonics Technology Letters.

[13]  Mk Meint Smit,et al.  Photoluminescence characterization of Er-implanted Al2O3 films , 1993 .

[14]  J. W. Hofstraat,et al.  Novel preorganized hemispherands to encapsulate rare earth ions: shielding and ligand deuteration for prolonged lifetimes of excited Eu3+ ions , 1997 .

[15]  V. Gapontsev,et al.  BRIEF COMMUNICATIONS: Mechanism and parameters of the quenching of luminescence of rare-earth ions by hydroxyl impurity groups in laser phosphate glass , 1981 .

[16]  W. Miniscalco Erbium-doped glasses for fiber amplifiers at 1500 nm , 1991 .

[17]  I. Baumann,et al.  Erbium-doped single- and double-pass Ti:LiNbO/sub 3/ waveguide amplifiers , 1994 .

[18]  Morio Kobayashi,et al.  Amplification in erbium-doped silica-based planar lightwave circuits , 1992 .

[19]  Mk Meint Smit,et al.  Net optical gain at 1.53 mu m in Er-doped Al2O3 waveguides on silicon , 1996 .

[20]  Wolfgang Sohler,et al.  Er‐diffused Ti:LiNbO3 waveguide laser of 1563 and 1576 nm emission wavelengths , 1992 .