Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices
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[1] J. Harris,et al. Interface studies of AlxGa1−xAs‐GaAs heterojunctions , 1979 .
[2] Lester F. Eastman,et al. Rectification at n-n GaAs:(Ga,Al)As heterojunctions , 1979 .
[3] A. Cho,et al. Photocollection efficiency and interface charges of MBE‐grown abrupt p (GaAs) ‐N (Al0.33Ga0.67As) heterojunctions , 1978 .
[4] H. Wieder,et al. Thermally converted surface layers in semi‐insulating GaAs , 1977 .
[5] R. Sahai,et al. Double-heterojunction photocathode devices , 1975 .
[6] D. T. Cheung,et al. A simplified model for graded-gap heterojunctions , 1975 .
[7] W. Wiegmann,et al. Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructures , 1974 .
[8] R. Rediker,et al. The graded‐gap Alx Ga1 − x As–GaAs heterojunction , 1972 .
[9] C. R. Crowell. Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes , 1969 .
[10] C. R. Crowell. The Richardson constant for thermionic emission in Schottky barrier diodes , 1965 .