High‐field transport properties of aluminum‐embedded aluminum oxide films

Current‐voltage characteristics of aluminum‐embedded aluminum oxide thin films with Al or Au electrodes, between 150–1000 A in thickness, prepared by thermic evaporation of pure aluminum in partial air pressure are studied. I‐V characteristics of these films showed metallic conductivity, switching, and memory effects different than those observed in amorphous materials, and metal‐oxide‐metal diode characteristics as the amount of metallic aluminum within the oxide is decreased in respective samples. The switching and memory effects are found to be independent of oxide thickness and electrode material.