Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures

[1]  G. Salamo,et al.  Photoluminescence study of exciton localization in InGaAs bulk and InGaAs/InAlAs wide quantum well on InP (001) substrate , 2022, Journal of Luminescence.

[2]  Zhongkai Zhang,et al.  Effect of Sb composition on the band alignment of InAs/GaAsSb quantum dots , 2021, Chinese Physics B.

[3]  G. Salamo,et al.  Comparative study of photoluminescence for type-I InAs/GaAs0.89Sb0.11 and type-II InAs/GaAs0.85Sb0.15 quantum dots , 2019 .

[4]  D. Huffaker,et al.  Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots , 2018, Journal of Luminescence.

[5]  Huiyun Liu,et al.  Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer , 2018, IEEE Journal of Photovoltaics.

[6]  G. Salamo,et al.  Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers , 2017 .

[7]  Huiyun Liu,et al.  Investigation of InAs/GaAs 1−x Sb x quantum dots for applications in intermediate band solar cells , 2016, PVSC 2016.

[8]  D. Huffaker,et al.  High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells , 2016 .

[9]  Tao Yang,et al.  Hybrid Type-I InAs/GaAs and Type-II GaSb/GaAs Quantum Dot Structure with Enhanced Photoluminescence , 2015 .

[10]  Huiyun Liu,et al.  InAs/GaAsSb quantum dot solar cells. , 2014, Optics express.

[11]  B. Alén,et al.  Effect of Sb incorporation on the electronic structure of InAs quantum dots , 2013 .

[12]  D. Huffaker,et al.  Tuning quantum dot luminescence below the bulk band gap using tensile strain. , 2013, ACS nano.

[13]  A. V. Katkov,et al.  In-rich molecular beam epitaxy of InAs on Sb-terminated GaAs(001) surface , 2013 .

[14]  H. Tan,et al.  Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique , 2013 .

[15]  A. Lin,et al.  Effects of GaAs(Sb) cladding layers on InAs/AlAsSb quantum dots , 2013 .

[16]  J. Llorens,et al.  Analysis of the modified optical properties and band structure of GaAs1-xSbx-capped InAs/GaAs quantum dots , 2012 .

[17]  D. Huffaker,et al.  Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures , 2012 .

[18]  J. F. Chen,et al.  Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony , 2011 .

[19]  Richard A. Hogg,et al.  Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate , 2011 .

[20]  G. Huyet,et al.  Band alignment tailoring of InAs1-xSbx/GaAs quantum dots: control of type I to type II transition. , 2010, Nano letters.

[21]  C. Honsberg,et al.  Variability of heterostructure type with thickness of barriers and temperature in the InAs/GaAsSb quantum dot system , 2010 .

[22]  H. Tan,et al.  Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer , 2010 .

[23]  Christiana Honsberg,et al.  Use of a GaAsSb buffer layer for the formation of small, uniform, and dense InAs quantum dots , 2010 .

[24]  A. Fiore,et al.  "Plug and play" single photons at 1.3 μm approaching gigahertz operation , 2008 .

[25]  M. S. Skolnick,et al.  Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer , 2008 .

[26]  T. Rotter,et al.  Optical properties of patterned InAs quantum dot ensembles grown on GaAs nanopyramids , 2007 .

[27]  J. Harmand,et al.  The effect of potential fluctuations on the optical properties of InGaAs∕InGaAlAs single and coupled double quantum wells , 2006 .

[28]  H. Eisele,et al.  Structure of InAs/GaAs quantum dots grown with Sb surfactant , 2006 .

[29]  Richard A. Hogg,et al.  Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer , 2005 .

[30]  N. Yamamoto,et al.  Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer , 2005 .

[31]  F. Koyama,et al.  Surfactant Effect of Sb on GaInAs Quantum Dots Grown by Molecular Beam Epitaxy , 2004 .

[32]  Aizhen Li,et al.  Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures , 1997 .

[33]  Wei,et al.  InAsSb/InAs: A type-I or a type-II band alignment. , 1995, Physical review. B, Condensed matter.

[34]  Leonard,et al.  Critical layer thickness for self-assembled InAs islands on GaAs. , 1994, Physical review. B, Condensed matter.

[35]  M. El-Desouki,et al.  Effects of Sb incorporation in GaAsSb-capping layer on the optical properties of InAs/GaAs QDs grown by Molecular Beam Epitaxy , 2017 .