The Optimal Speed of Transition: A General Equilibrium Analysis''CEPR Discussion Paper No

A structure which achieves a sloped topography where a layer of polycrystalline silicon contacts a single crystal silicon substrate and a process for fabricating the structure are disclosed. The structure comprises a sloped tip of a single crystal silicon material located at the end of the polycrystalline silicon layer and making contact with the single crystal silicon substrate. The process involves defining the polycrystalline silicon layer by applying an orientation-selective etch which etches unwanted polycrystalline silicon preferentially to single crystal silicon so that the sloped tip remains essentially intact to achieve said sloped topography contact area.