Multi-Poisson process analysis of real-time soft-error rate measurements in bulk 65 nm and 40 nm SRAMs

Abstract Altitude and underground real-time soft error rate (SER) measurements on SRAM circuits have been analyzed in terms of independent multi-Poisson processes describing the occurrence of single events as a function of bit flip multiplicity. Applied for both neutron-induced and alpha particle-induced SERs, this detailed analysis highlights the respective contributions of atmospheric radiation and alpha contamination to multiple cell upset mechanisms. It also offers a simple way to predict by simulation the radiation response of a given technology for any terrestrial position, as illustrated here for bulk 65 nm and 40 nm SRAMs.

[1]  Philippe Roche,et al.  Real-time soft-error rate measurements: A review , 2014, Microelectron. Reliab..

[2]  Daniela Munteanu,et al.  Soft Errors: From Particles to Circuits , 2015 .

[3]  P. Roche,et al.  Altitude and Underground Real-Time SER Characterization of CMOS 65 nm SRAM , 2008, IEEE Transactions on Nuclear Science.

[4]  Tino Heijmen,et al.  Altitude and underground real-time SER tests of embedded SRAM , 2009, 2009 European Conference on Radiation and Its Effects on Components and Systems.

[5]  Philippe Roche,et al.  Real-time soft error rate measurements on bulk 40 nm SRAM memories: a five-year dual-site experiment , 2016 .

[6]  G. Gasiot,et al.  Altitude SEE Test European Platform (ASTEP) and First Results in CMOS 130 nm SRAM , 2007, IEEE Transactions on Nuclear Science.

[7]  Philippe Roche,et al.  ASTEP (2005-2015): Ten years of soft error and atmospheric radiation characterization on the Plateau de Bure , 2015, Microelectron. Reliab..

[8]  Philippe Roche,et al.  Soft-errors induced by terrestrial neutrons and natural alpha-particle emitters in advanced memory circuits at ground level , 2010, Microelectron. Reliab..

[9]  G. Gasiot,et al.  Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm , 2014, 2014 IEEE Radiation Effects Data Workshop (REDW).

[10]  D. Munteanu,et al.  A review of real-time soft-error rate measurements in electronic circuits , 2012, 2012 IEEE International Reliability Physics Symposium (IRPS).