Bond pad and ESD protection structure for 0.25/spl mu/m/0.18/spl mu/m RF-CMOS

In CMOS, standard ESD protections are hindered by parasitic capacitance, area requirements and quality factor. This paper presents dedicated diode network ESD structures together with special bond pad configurations with a satisfactory performance. The amount of used diode area sets the ESD performance and in all cases an excellent RF performance is obtained. We show measurement results for 0.25/spl mu/m and 0.18/spl mu/m CMOS technology.

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