论文信息 - Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range

Uncooled InAs/GaSb superlattice photovoltaic detector operating in the mid-wavelength infrared range

A p-i-n superlattice photovoltaic detector is presented, operating uncooled in the 3-5 /spl mu/m mid-wavelength infrared region. The active zone of the detector device, grown by molecular beam epitaxy on a p-type GaSb substrate, is made of 150 periods of strain compensated InAs/InSb/GaSb (10/1/10 monolayers) superlattice (SL). The SL detector exhibited at 293 K a cutoff wavelength of 5.9 /spl mu/m, an absorption coefficient of 5/spl times/10/sup 3/ cm/sup -1/ and a responsivity of 0.7 mA/W at 3.5 /spl mu/m.

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