We fabricated 1.54m laser diodes that employ one integrated GaInAsP–InP and one Si–SiO2 mirror in combination with a strain-compensated GaInAsP multiquantum-well active layer. Considerable care has to be taken of the temperature performance of the devices. Here, an important parameter is the gain offset between the gain peak wavelength and the cavity resonance. This offset is related to the experimentally accessible photoluminescence (PL) offset between the PL-peak wavelength and the emission wavelength. Vertical-cavity laser (VCL) characteristics such as threshold current and quantum efficiency show an extremely sensitive dependence on this parameter. In this paper, we focus on the temperature performance of our VCL’s as a function of the cavity tuning. VCL’s designed for PL-offset values between +17 and 16 nm are fabricated and characterized. As expected, the threshold current of all lasers shows a pronounced minimum at low temperatures. The position of this minimum depends on the offset at room temperature (RT) as a parameter. However, it turns out that the minimum threshold current is not obtained by matching gain peak and cavity wavelength for that temperature. The observed behavior is described well by calculations, taking into account the temperature dependence of the optical gain, of the cavity resonance, and of the cavity losses. The model is a valuable tool to tune the lasers for example low threshold current or reduced temperature sensitivity.
[1]
J. Bowers,et al.
Numerical analysis of 1.54 μm double‐fused vertical‐cavity lasers operating continuous‐wave up to 33 °C
,
1996
.
[2]
John E. Bowers,et al.
Laterally oxidized long wavelength CW vertical- cavity lasers
,
1996
.
[3]
Long Yang,et al.
Room-temperature continuous-wave operation of 1.54-μm vertical-cavity lasers
,
1995,
IEEE Photonics Technology Letters.
[4]
John E. Bowers,et al.
Modeling and optimization of 1.54 μm double-fused VCSELs for cw operation above room temperature
,
1996,
Photonics West.
[5]
Modeling the current to light characteristics of index‐guided vertical‐cavity surface‐emitting lasers
,
1993
.
[6]
Joachim Piprek,et al.
High-temperature lasing of long-wavelength VCSELs: problems and prospects
,
1997,
Photonics West.
[7]
K. Streubel,et al.
Room-temperature pulsed operation of 1.5-μm vertical cavity lasers with an InP-based Bragg reflector
,
1996,
IEEE Photonics Technology Letters.
[8]
B. Tell,et al.
TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS
,
1992
.
[9]
Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers
,
1994
.
[10]
Brian Thibeault,et al.
Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers
,
1993
.
[11]
M. Nathan,et al.
Semiconductor lasers.
,
1966,
Applied optics.